22
RF Device Data
Freescale Semiconductor
MRF1570NT1 MRF1570FNT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
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AN211A: Field Effect Transistors in Theory and Practice
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AN215A: RF Small-Signal Design Using Two-Port Parameters
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AN721: Impedance Matching Networks Applied to RF Power Transistors
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AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
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AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
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AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
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AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
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EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
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Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
9
June 2008
?
Corrected specified performance values for power gain and efficiency on p. 1 to match typical performance
values in the functional test table on p. 2
?
Replaced Case Outline 1366-04 with 1366-05, Issue E, p. 1, 16-18. Removed Drain-ID label from View
Y-Y. Added Pin 9 designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min,
respectively.
?
Replaced Case Outline 1366A-02 with 1366A-03, Issue D, p. 1, 19-21. Removed Drain-ID label from View
Y-Y. Removed Surface Alignment tolerance label for cross hatched section on View Y-Y. Added Pin 9
designation. Changed dimensions D2 and E2 from basic to .604 Min and .162 Min, respectively. Added
dimension E3. Restored dimensions F and P designators to DIM column on Sheet 3.
?
Added Product Documentation and Revision History, p. 22
10
June 2009
?
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
?
Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 22
?
Added Electromigration MTTF Calculator availability to Product Software, p. 22
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相关代理商/技术参数
MRF1570NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1570T1 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF157MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF158 功能描述:射频MOSFET电源晶体管 5-500MHz 2Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF160 功能描述:射频MOSFET电源晶体管 5-500MHz 4Watts 28Volt Gain 16dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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MRF16030 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF POWER TRANSISTOR NPN SILICON
MRF161 制造商:ASI 制造商全称:ASI 功能描述:SILICON N-CHANNEL RF POWER MOSFET